Electron Devices Meeting (IEDM), 2011 IEEE International, 31.6. 1-31.6. 4, 2011. 464, 2011. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, .

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